Design of a linear microwave amplifier for X-Band carriers

Authors

  • CRISTHIAN CASTRO-PEÑAHERRERA Universidad Politécnica de Valencia
  • CARLOS ALBERTO SERRA JIMENEZ Universidad Técnica de Ambato

DOI:

https://doi.org/10.29019/enfoqueute.v9n1.231

Keywords:

transmission lines, SWR, reflection coefficient, S-parameters

Abstract

In the present article, are exposed the results obtained in the design of a linear microwave amplifier for X-band carriers. Fundamentally, shows the contributions made in the techniques of implementation of high frequency amplifier circuits based on  transistors of GaN HEMT technology;  as well as the elaboration of polarization lines and adaptation ports, stability control and gains in the desired frequency range. It should be noted the use of free software tools for the characterization of the transistor through its S parameters and the geometry of the transmission lines of the circuit.

Downloads

Download data is not yet available.

Author Biographies

CRISTHIAN CASTRO-PEÑAHERRERA, Universidad Politécnica de Valencia

Ing en Electrónica y Comunicaciones

CARLOS ALBERTO SERRA JIMENEZ, Universidad Técnica de Ambato

Ing MSC, docente de la Facultad de Ingeniería en Sistemas, Electrónica e Industrial de la Universidad Técnica de Ambato

References

Cripps, S. C. (2006). RF power amplifiers for wireless communications (Segunda ed.). Norwood: Artech House microwave.

Froehner, W. H. (1967). Quick amplifier design with scattering parameters. S-Parameters, circuit analysis and design, 5,1-5,11.

Glover, I. A., Penoock, S. R., & Shepherd, P. R. (2005). Microwave Devices, Circuits and Subsistems for Comunications Engineering. West Sussex: John Wiley & Sons, Ltd.

Hu, L., Qian, K., & Wang, B. (2015). Research of High Efficiency X-Band Power Amplifier. (IEEE, Ed.) International Symposium on Computational Intelligence and Design, 129-132. doi:10.1109/ISCID.2015.214

Instituto Espacial Ecuatoriano. (12 de Noviembre de 2016). Instituto Espacial Ecuatoriano. Obtenido de http://www.institutoespacial.gob.ec/

Köprü, R., Kuntman , H., & Yarman, B. (2013). A Novel Method to Design Wideband Power. IEEE, 1942-1945.

Perez, J. C., & Jaramillo, I. J. (2012). Methodology of design and construction of microwave power amplifiers prototypes for uhf radio frequency band. Bogota D.C., Colombia: Universidad Nacional de Colombia.

Qucs. (12 de Mayo de 2017). Quite universal circuit simulator. Obtenido de http://qucs.sourceforge.net/docs.html

Resca, D., Raffo, A., Falco, S. D., Scappaviva, F., Vadalà, V., & Vannini, G. (Abril de 2014). X-Band GaN Power Amplifier for Future Generation SAR Systems. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 24(4), 266-268. doi:10.1109/LMWC.2014.2299552

Sayre, C. W. (2001). Complete Wireless Design (Segunda ed.). New York: McGraw-Hill.

Setiawan, E., Latin, M., & Alam, B. (2017). Design and Simulation of Front-End Broadband RF Power. International Symposium on Electronics and Smart Devices, 314-317.

Smith, R., & Cripps, S. (2016). Broadband Push-Pull Power Amplifier Design at. Proceedings of the 46th European Microwave Conference, 1353-1356.

Soler, J. J. (2015). Diseño de un amplificador clase F inverso a 3.5 GHZ usando tecnología GaN-HEMT. Ingeniería, negocios e innovación, 33-44.

Suarez, A., Wentzel, A., & Heinrich, W. (2017). Stability Analysis of Digital Microwave. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 3056-3070.

Virdee, B. S., Virdee, A. S., & Banyamin, B. Y. (204). Broadband Microwave Amplifiers. London: Artech House.

Yarman, B. S., & Ejaz, M. (2015). Practical Consideration to Design Broadband. Microwave Symposium (MMS, IEEE 15th Mediterranean, 1-4.

Zozaya, A. J. (2013). Diseño de amplificadores lineales y de bajo ruido de RF (Tema 2). Carabobo: Universidad de Carabobo.

Downloads

Published

2018-03-30

How to Cite

CASTRO-PEÑAHERRERA, C., & SERRA JIMENEZ, C. A. (2018). Design of a linear microwave amplifier for X-Band carriers. Enfoque UTE, 9(1), pp. 12 – 24. https://doi.org/10.29019/enfoqueute.v9n1.231

Issue

Vol. 9 No. 1 (2018)

Section

Automation and Control, Mechatronics, Electromechanics, Automotive

License

The authors retain all copyrights ©.

  • The authors retain their trademark and patent rights, as well as rights to any process or procedure described in the article.
  • The authors retain the right to share, copy, distribute, perform, and publicly communicate the article published in Enfoque UTE (for example, post it in an institutional repository or publish it in a book), provided that acknowledgment of its initial publication in Enfoque UTE is given.
  • The authors retain the right to publish their work at a later date, to use the article or any part of it (for example, a compilation of their work, lecture notes, a thesis, or for a book), provided that they indicate the source of publication (authors of the work, journal, volume, issue, and date).